Überspringen
Das PCIM Magazine ist verfügbar

Entdecken Sie spannende Entwicklungen, die die Branche nachhaltig prägen und bleiben Sie auf dem neuesten Stand in der Welt der Leistungselektronik.

E-Mobility & Energy Storage Stage

SiC JFET versus IGBT in Charger and Battery Disconnect

08.05.2025

Referent: Jonathan Dodge, VApplications Engineer, onsemi

onsemi

The SiC JFET touts the lowest conduction loss per area, whereas the seasoned IGBT is lower cost. This presentation helps to answer the question of which to choose for a battery charger breaker or for a battery disconnect. Both have active cooling available, but the load profiles are quite different. The interactions of power loss, temperature, and current in addition to transient thermal response complicate device selection. Simulation reveals the strengths and limitations of each device type as well as clarifying the circuit operation. Pulse and surge capability are compared as well as power loss during normal operation.

Mehr zur Person

Tobias Keller

Jonathan Dodge

Applications Engineer

The SiC JFET touts the lowest conduction loss per area, whereas the seasoned IGBT is lower cost. This presentation helps to answer the question of which to choose for a battery charger breaker or for a battery disconnect. Both have active cooling available, but the load profiles are quite different. The interactions of power loss, temperature, and current in addition to transient thermal response complicate device selection. Simulation reveals the strengths and limitations of each device type as well as clarifying the circuit operation. Pulse and surge capability are compared as well as power loss during normal operation.