Referent: Leo Aichriedler, Distinguished Engineer Application Marketing, Infineon Technologies Austria
New, emerging low-voltage (< 1000VAC and < 1500VDC) power distribution schemes require fast acting circuit protection devices, typically implemented as solid state circuit breakers (SSCB). In contrast to conventional electro-mechanical breakers, SSCBs comprise semiconductor power switches enabling the interruption of faulted circuits within sub-Micro second range. The employed power switch has to support low conduction losses during normal operation while being capable of handling extreme overvoltage and overcurrent / short circuit events in a reliable manner. Addressing these specific requirements, an application-tailored Silicon Carbide JFET technology in combination with optimized discrete packaging enables ultra-low RDSon (1m@ - 5m@ at 750V - 1.2kV VBDss) power devices. Starting from key requirements of SSCB applications, the presentation will focus on the specific features of the new JFET technology and demonstrate the performance by practical application measurements.
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