Skip
Available now: PCIM Magazine

Discover exciting developments shaping the industry and stay up to date with the latest in the world of power electronics.

Technology Stage

A Novel Silicon Carbide JFET Technology Enables the Break-Through of HV Solid State Power Distribution

8 May 2025

Speaker: Leo Aichriedler, Distinguished Engineer Application Marketing, Infineon Technologies Austria

infineon

New, emerging low-voltage (< 1000VAC and < 1500VDC) power distribution schemes require fast acting circuit protection devices, typically implemented as solid state circuit breakers (SSCB). In contrast to conventional electro-mechanical breakers, SSCBs comprise semiconductor power switches enabling the interruption of faulted circuits within sub-Micro second range. The employed power switch has to support low conduction losses during normal operation while being capable of handling extreme overvoltage and overcurrent / short circuit events in a reliable manner. Addressing these specific requirements, an application-tailored Silicon Carbide JFET technology in combination with optimized discrete packaging enables ultra-low RDSon (1m@ - 5m@ at 750V - 1.2kV VBDss) power devices. Starting from key requirements of SSCB applications, the presentation will focus on the specific features of the new JFET technology and demonstrate the performance by practical application measurements.

More about the person

Leo-Aichriedler

Leo Aichriedler

Distinguished Engineer Application Marketing

Leo Aichriedler received his Dipl.-Ing. in electrical engineering from the Technical University of Graz in 1998. After serving in various positions in the semiconductor industry, he joined Infineon Technologies in 2013 focusing on high power control and actuation solutions. He currently acts as Distinguished Engineer, driving the development of wide-bandgap power technologies for emerging applications such as HV Solid State Power Distribution in the industrial and automotive segment. Dr. Peter Friedrichs received his Dipl.-Ing. in microelectronics from the Technical University of Bratislava in 1993 and finished his Ph.D thesis at the Fraunhofer Institute FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC. FAfter various employments dedicated to Silicon Carbide Technology, he joined Infineon Technologies AG in 2011 and acts currently as Infineon’s Fellow for SiC Innovation & Industrialization.