An Overview of Dynamic Reliability Testing for WBG Power Semiconductors

Dynamic tests for wide-bandgap power semiconductors have become established standards in accelerated reliability testing to create failure lifetime models. This process continues up to today with new not yet standardized dynamic tests being discussed and implemented.The reason for the new testing methods are new failure models in Wide-bandgap power semiconductors made of SiC and GaN that require new test methods for precise stimulation of the failure mechanics in the different materials of the power modules. With the rising numbers of SiC electric vehicles on the street’s tests such as DGS, dynamic H3TRB or the upcoming dynamic HTFB getting more and more common. This talk will start with an introduction of how reliability testing works and why accelerated tests are required. Afterwards the test methods, challenges and setups for different dynamic tests will be discussed. As outlook a test setup and methodology for the yet to be standardized dynamic HTFB test will be presented.