ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter ATX), an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.​

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The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(on) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.

ROHM's TRCDRIVE pack™ is a series of SiC modules specifically designed for traction inverter applications, reducing their size through a unique structure to maximize heat dissipation area. TRCDRIVE pack™ supports up to 300kW and features high power density and a unique terminal configuration: So the modules help to solve the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours.​

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The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching

Contributes to higher efficiency in automotive electric compressors and inverters for industrial equipment

ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading* low loss characteristics with high short-circuit resistance. This makes the devices ideal for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future.

ROHM redesigned the device structure and adopted an appropriate package to develop new 4th Generation IGBTs suitable for high voltage by delivering industry-low loss characteristics with superior short-circuit tolerance. These devices achieve an industry-leading* short-circuit withstand time of 10µs (Tj=25°C) together with low switching and conduction losses while maintaining a high withstand voltage of 1200V and meeting automotive standards by reviewing the device structure, including the peripheral design. At the same time, the new TO-247-4L package products, which feature 4 terminals, can accommodate an effective voltage of 1100V in a ‘Pollution Degree 2 environment’ by ensuring adequate creepage distance between pins. This enables support for higher voltage applications than conventional products.

ROHM expands its package portfolio with “HSDIP20” & “DOT247” , installing the latest 4th Gen. SiC MOSFET. 750V & 1200V devices in different RDS_on. “HSDIP” has H-bridge (4in1) & six-pack (6 in1) configurations with inside isolation functions, ensuring application compactness. DOT247 is a unique package in a half-bridge (2in1) configuration with more robust performance for power cycling stress. Both achieve up to 30kW power application depending on their conditions.

ROHM's NEW EcoGaN™ Power stage ICs BM3GxxMUV-LB (combined 650V GaN HEMTs and gate driver): will be extended with higher integrated PFC & QR flyback converter ICs, providing an optimum solution for all electronics systems that requires high power density and efficiency.

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New developed compact GaN Controller such as totem pole PFC and LLC, support compact ACDC power supply applications.