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Gen 4 SiC Devices in Embedded module design - the path to higher power density and cost-efficiency

11.06.2026

Referent: Xing Huang, CEO & CTO, PNJ

Silicon (Si) power devices are reaching their limits, making Silicon Carbide (SiC) essential for next-generation power electronics. However, traditional wire-bonded packaging creates parasitic limitations that restrict SiC performance.

This presentation explores embedded packaging as a disruptive approach for two key markets: automotive traction inverters and AI data centers (AIDC).

For automotive applications, embedded packaging reduces system size and improves thermal reliability under harsh cycling conditions. For AIDC, it enables ultra-efficient, high-density power systems supporting 800V HVDC architectures and >1 MHz switching frequencies, helping achieve efficiency targets of up to 98.5%.

The presentation highlights the benefits of embedding SiC dies, key manufacturing trade-offs, and future opportunities for this cross-industry packaging technology.

More about the person

Xing Huang

Xing Huang

CEO & CTO, PNJ

2009 | Graduated from University of Electronic Science and Technology of China and pursued government-sponsored study abroad in the United States 2014 | Obtained a doctoral degree from North Carolina State University Developing the world's first 10kV-class ultra-high voltage SiC devices for SST applications 2014 - 2018 | Worked at foreign companies including United SiC (now part of ON Semiconductor), participating in the Power America project. 2018.9 | Founded PNJ 2019 - 2021 |

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