Referent: Daniel Murphy, Director of Technical Marketing, Cambridge GaN Devices
Gallium nitride (GaN) power technology is maturing rapidly, with improved reliability, manufacturing scale, and declining cost enabling expansion into higher-power applications. Traction inverters for electric vehicles demand high efficiency, high current capability, and stable operation under demanding conditions. ICeGaN technology monolithically integrates features including an auxiliary HEMT and an active Miller clamp within the GaN device. These integrated elements improve switching behaviour and control, contributing to stable and effective device paralleling—an essential requirement for achieving the current levels needed in high-power traction inverters. These features also bring enhanced device robustness which is essential in the automotive environment. This presentation outlines how ICeGaN provides a practical pathway for scaling GaN into next-generation traction inverter systems.
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