Rheinmetall’s SiC MOSFET half-bridge power module is the cornerstone of advanced e-traction inverter technology, designed for the forefront of electric vehicle propulsion. This power module is uniquely scalable for vehicle specific voltage and power requirements, with configurations available for both 750V and 1,200V systems. The agnostic design of the MOSFET ensures adaptability and compatibility with a wide range of electric vehicles, reflecting our commitment to innovation and excellence in meeting the diverse needs of the e-mobility market.

Benefits

• Dual Sided Direct Cooling (DSDC): very efficient transistor cooling.
• Parasitic impedance optimized electrical design: allowing for ultra fast switching with reduced losses.
• Due to improved thermal budget smaller SiC MOSFET die area for same current rating.