DF Inverter Solution is a demonstrator solution showing the capabilities of the Single Crystal Diamond.

DF Power Inverter Solution is one of its kind with power desnity of 500 kW/L and Weight of 1.3kgs and requires half the number of the Si or SiC dies to acehive the same power.

This unique product offers highest possible power density of 500 kW/L with lowest form factor. This allows the OEM to reduce the weight of their power inverter solution, thus enabling the range extenstion on their EV platforms.

DF Power Inverter Solution is flexible with any technology Si, SiC and GAN intergration thus offerings cost effectiveness and performance.

Introducing DFPAK, the world's first high power module utilizing Single Crystal Diamond (SCD) as the thermal management substrate for silicon carbide (SiC) semiconductor.

DFPAK offers groundbreaking performance advantages over traditional SiC-based packages, including:

Higher Power Density: SCD's superior thermal conductivity enables smaller, lighter, and more efficient power modules.Lower ON-Resistance: Lower Rds(on) translates to reduced power losses and improved system efficiency.

Highest Thermally Conductive Material: SCD’s 2,200W/m-K superior thermal conductivity over materials such as SiN at 90 W/m-K and AlN at 180 W/m-K.

Highest Operating Temperature Range reaching 200C( 200 hrs max): SCD's remarkable thermal stability enables functionality in extreme conditions.

World-class Miniaturization: The smallest overall designs leveraging the DFPAK reducing area and weight resulting in the highest power densities available.

DF Power PAK Specifications:

VOLTAGE CLASS : 1200 V

TYPICAL ON-RESISTANCE: 2.67 mΩ

CONTINUOUS CURRENT: 500 A; PULSED 700 A

PACKAGE: DFPAK OPERATING TEMPERATURE: -55°C TO +175°C

Extended Operating Temperature of 200°C (200 hrs max)

JUNCTION TEMPERATURE: 175C°C , AEC Q100 Qualified

The Diamond Insulated Substrate features Advanced Single Crystal Diamond Chip Dielectric Technology.

This innovative technology is transforming the power electronics sector, offering exceptional thermal conductivity and a high dielectric breakdown voltage, allowing it to operate at temperatures exceeding 200°C.

Designed for high-power applications, the DF Power Diamond Substrate product is ideal for power micro modules that utilize Si IGBTs, SiC (Silicon Carbide), or GaN (Gallium Nitride).

Its design enhances thermal conductivity and stress absorption, efficiently transferring heat to the cooling system.

Typical use cases in automotive inverters, power generation, and renewable energy sectors, where durability, power density, and performance are essential.

DF Power Diamond Substrate SPECIFICATIONS:

Exceptional Thermal Conductivity 2,200W/m-K

High Voltage Dielectric Strength (up to 6kV)

High Temperature Operation (up to 200°C)

Best-in-class Rth performance

Compatible with Etching processes

Available in different thickness from 300 um to 170um