Introducing DFPAK, the world's first high power module utilizing Single Crystal Diamond (SCD) as the thermal management substrate for silicon carbide (SiC) semiconductor.

DFPAK offers groundbreaking performance advantages over traditional SiC-based packages, including:

Higher Power Density: SCD's superior thermal conductivity enables smaller, lighter, and more efficient power modules.Lower ON-Resistance: Lower Rds(on) translates to reduced power losses and improved system efficiency.

Highest Thermally Conductive Material: SCD’s 2,200W/m-K superior thermal conductivity over materials such as SiN at 90 W/m-K and AlN at 180 W/m-K.

Highest Operating Temperature Range reaching 200C( 200 hrs max): SCD's remarkable thermal stability enables functionality in extreme conditions.

World-class Miniaturization: The smallest overall designs leveraging the DFPAK reducing area and weight resulting in the highest power densities available.

DF Power PAK Specifications:

VOLTAGE CLASS : 1200 V

TYPICAL ON-RESISTANCE: 2.67 mΩ

CONTINUOUS CURRENT: 500 A; PULSED 700 A

PACKAGE: DFPAK OPERATING TEMPERATURE: -55°C TO +175°C

Extended Operating Temperature of 200°C (200 hrs max)

JUNCTION TEMPERATURE: 175C°C , AEC Q100 Qualified