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Diamond Substrates
Description
The Diamond Insulated Substrate features Advanced Single Crystal Diamond Chip Dielectric Technology.
This innovative technology is transforming the power electronics sector, offering exceptional thermal conductivity and a high dielectric breakdown voltage, allowing it to operate at temperatures exceeding 200°C.
Designed for high-power applications, the DF Power Diamond Substrate product is ideal for power micro modules that utilize Si IGBTs, SiC (Silicon Carbide), or GaN (Gallium Nitride).
Its design enhances thermal conductivity and stress absorption, efficiently transferring heat to the cooling system.
Typical use cases in automotive inverters, power generation, and renewable energy sectors, where durability, power density, and performance are essential.
DF Power Diamond Substrate SPECIFICATIONS:
Exceptional Thermal Conductivity 2,200W/m-K
High Voltage Dielectric Strength (up to 6kV)
High Temperature Operation (up to 200°C)
Best-in-class Rth performance
Compatible with Etching processes
Available in different thickness from 300 um to 170um
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