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Cohu GmbH
cStrider WBG SiC & GaN High Power Probecard
Description
SiC and GaN wide bandgap wafer test up to 200°CInnovative pressure-level control during high-voltage test process increases probing efficiency on wafer edge up to 3000 Volts Scalable design provides flexibility to field-upgrade test parallelism from x1 up to x32Robust horizontal MEMS probes provide high current carrying capability up to 1000A per DieVolta-Flux Cartridge Design enables sustainable on-site single pin replacement with significant lower cost of test