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650V GaN HEMT in a compact, high-heat dissipation TOLL package
Description
ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter ATX), an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.
The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(on) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
Address
ROHM Semiconductor GmbH
Karl-Arnold-Str. 15
47877 Willich
Germany
Telephone+49 2154 9210
Fax+49 2154 921400
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