BridgeSwitch-2 for BLDC Motor Drive

PowiGaN is Power Integrations’ internally developed gallium nitride (GaN) technology. PowiGaN switches replace the traditional silicon transistors on the primary side of PI’s highly integrated offline flyback switcher ICs, reducing switching losses and enabling chargers, adapters and open frame power supplies that are more efficient, smaller and lighter than silicon alternatives.

Power Integrations continue to lead the advancement of GaN technology, expanding the switching voltage and elevating GaN as a mature, dependable semiconductor technology for even the most demanding applications.

Industry-First High-Voltage GaN Power Devices for a Wide Range of Applications

InnoSwitch3-EP for Appliances and Industrial Use

• 750 V, 900 V or 1250 V PowiGaN Switch
• The world’s highest-voltage single-switch GaN power supply ICs extend the efficiency benefits of GaN to many applications currently served by silicon-carbide (SiC) technology.

InnoSwitch3-AQ - AEC-Q100 Qualified for Automotive Use

• 750 V or 900 V PowiGaN Switch

• The first automotive-qualified 900 V GaN power devices offer the perfect solution for replacing 12 V lead-acid batteries in 400 BEV systems.

InnoMux2-EP for Multi-Output Flyback Power Supplies

• 750 V PowiGaN Switch

• The only single-stage flyback solution for multiple independently regulated outputs eliminates the need for post-regulators and achieves Zero Voltage Switching (ZVS) without active clamping.

HiperPFS-5 Power Factor Correction ICs

• 750 V PowiGaN Switch

• The only PFC controller IC utilizing GaN technology achieves a 0.98 power factor and eliminates the need for bulky heatsinks at the PFC stage. It supports up to 250 W output and can be stacked in parallel for up to 500 W.

Highest Level of Integration in USB PD and Fast-Charging

• InnoSwitch5-Pro - 900 V PowiGaN, ZVS without active clamping, supporting 28 V USB PD EPR
• InnoSwitch4-Pro - 750 V PowiGaN, ZVS with ClampZero, digitally controllable via I²C interface
• InnoSwitch4-CZ - 750 V PowiGaN, ZVS with ClampZero for maximum efficiency
• InnoSwitch3-PD - 750 V PowiGaN, built-in USB-C and USB PD controller
• InnoSwitch3-Pro - 750 V PowiGaN, digitally controllable via I²C Interface

See live demos and meet our technical experts at Booth 9-426.

Electronic components meeting quality specifications established by the Automotive Electronics Council (AEC) are suitable for automotive use without additional component-level qualification testing. Most commonly referenced AEC documents include:

• AEC-Q100 - Failure Mechanism Based Stress Test Qualification For Integrated Circuits
• AEC-Q101 - Failure Mechanism Based Stress Test Qualification For Discrete Semiconductors

Automotive Safety Integrity Level (ASIL) is a risk classification scheme defined by the ISO 26262 - Functional Safety for Road Vehicles standard. This is an adaptation of the Safety Integrity Level (SIL) used in IEC 61508 for the automotive industry. ASIL certified devices enable implementation of ASIL traction inverter designs, dramatically reducing development time and cost.

Power Integrations offers a wide range of automotive qualified devices:

InnoSwitch3-AQ Flyback Switcher ICs
The InnoSwitch3-AQ Family of switcher ICs dramatically simplifies the design and manufacture of flyback power converters, particularly those requiring high efficiency and compact size. It's available with 1700 V SiC, 900 V PowiGaN, 750 V silicon or 900 V silicon options.

LinkSwitch-TN2Q High Voltage Offline Switcher ICs
LinkSwitch-TN2 family of ICs provides significant reduction in component count compared to traditional discrete solutions. Designs using the integrated devices are highly reliable without the use of opto isolators.

Qspeed Diodes
Qspeed diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. These features help designers improve the performance of their power conversion circuits.

SCALE-iDriver Gate Driver ICs
The SCALE-iDriver Family of gate driver ICs, optimized for driving IGBTs, traditional MOSFETs and SiC MOSFETs bring PI’s FluxLink magneto-inductive bi-directional communications technology to 1200 V driver applications.

SCALE EV Gate-Driver Boards
The SCALE EV family gate-driver boards are automotive-qualified dual-channel plug-and-play drivers for both silicon carbide (SiC) MOSFETs and silicon IGBTs.

See live demos and meet our technical experts at Booth 9-325.

The new SCALE-iFlex XLT family of dual-channel plug-and-play gate drivers is designed specifically for LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji) and equivalent “new dual” style IGBT modules. Supporting up to 2300 V blocking voltage, these single-board drivers enhance system utilization and reliability for energy storage systems and renewable energy installations.

Each compact SCALE-iFlex XLT driver board fits neatly within the outline of the module, providing converter system designers with greater mechanical design freedom. Built with PI’s advanced SCALE-2 chipset, the new devices minimize component count, further boosting reliability. They also offer robust protection for power switches, ensuring system safety and durability.

The full-featured drivers incorporate Negative Temperature Coefficient (NTC) data reporting, enabling isolated and accurate temperature measurement of the power module. This allows for optimal thermal management and potentially increases converter power by up to 30% with the same hardware. Additionally, the isolated NTC readout simplifies hardware by eliminating the need for multiple cables, connectors and extra isolation barrier crossing circuits.

See live demos and meet our technical experts at Booth 9-426. In addition, you can also see our highly integrated gate driver products in action by visiting our partners at PCIM Europe:

HY-LINE: Hall 7, Stand 108

• SCALE-iFlex XLT
• SCALE-iFlex LT NTC dual gate drivers with Negative Temperature Coefficient (NTC) sensing
• 2SP0230 SCALE-2 plug-and-play gate drivers for 62mm SiC-MOSFET and Si-IGBT modules

Mitsubishi Electric: Hall 7, Stand 409

• SCALE-iFlex LT NTC, 2SP0230
• SCALE-iFlex Single gate drivers for electric railway applications up to 3000 V
• 2SP0115T SCALE-2 dual-channel gate drivers for 17 mm IGBT modules up to 1700 V

Hitachi Energy: Hall 9, Stand 302

• 1SP0351 SCALE-2 compact single-channel gate drivers for 4500 V Press Pack IGBT (PPI) modules

Hitachi Europe: Hall 9, Stand 342

SCALE-iFlex Single

InnoMux-2 Off-Line Zero Voltage Switching (ZVS) Flyback Switcher IC for Multi-Output Applications:

• InnoMux2-EP - Up to Three CV Outputs or One CV & One CC Output for a Dimmable LED String
• InnoMux2-BL - One CV and up to Four CC Outputs for Dimmable LED Strings in Monitors or Display Panels

Most modern electronic systems rely on multiple internal voltages to operate various functions such as computing, communication and actuation function – typically heat, light, sound or motion of some kind. But losses in each conversion stage are compounded, degrading system performance and generating heat.

The InnoMux-2 IC overcomes this challenge by providing up to three independently regulated voltage outputs or two voltage output and a constant current output from a single stage, achieving a compact and efficient power sub-system with low component count.

The InnoMux-2 family of single-stage, independently regulated multi-output offline power-supply ICs consolidate AC-DC and downstream DC-DC conversion stages into a single chip, providing up to three independently regulated outputs for use in white goods, industrial systems, displays and other applications requiring multiple voltages.

Elimination of separate DC-DC stages slashes component count, reduces PCB footprint and increases efficiency by as much as 10 percentage points compared to traditional two-stage architectures. Efficiency is aided by the ICs’ 750 V PowiGaN gallium-nitride transistors, zero-voltage switching (without an active clamp) and synchronous rectification.

Highlights

• Single-stage power conversion for high efficiency
• Eliminates post-regulators
  • Up to 10% higher efficiency
  • Low component count
  • Less than 50 mW no-load consumption
• Up to three independently regulated outputs
  • Constant voltage and constant current outputs
  • Less than ±1% combined load/line/cross regulation

See live demos and meet our technical experts at Booth 9-426.

PowiGaN is Power Integrations’ internally developed gallium nitride (GaN) technology. PowiGaN switches replace the traditional silicon transistors on the primary side of PI’s highly integrated offline flyback switcher ICs, reducing switching losses and enabling chargers, adapters and open frame power supplies that are more efficient, smaller and lighter than silicon alternatives.

Power Integrations continue to lead the advancement of GaN technology, expanding the switching voltage and elevating GaN as a mature, dependable semiconductor technology for even the most demanding applications.

Industry-First High-Voltage GaN Power Devices for a Wide Range of Applications

InnoSwitch3-EP for Appliances and Industrial Use

• 750 V, 900 V or 1250 V PowiGaN Switch
• The world’s highest-voltage single-switch GaN power supply ICs extend the efficiency benefits of GaN to many applications currently served by silicon-carbide (SiC) technology.

InnoSwitch3-AQ - AEC-Q100 Qualified for Automotive Use

• 750 V or 900 V PowiGaN Switch

• The first automotive-qualified 900 V GaN power devices offer the perfect solution for replacing 12 V lead-acid batteries in 400 BEV systems.

InnoMux2-EP for Multi-Output Flyback Power Supplies

• 750 V PowiGaN Switch

• The only single-stage flyback solution for multiple independently regulated outputs eliminates the need for post-regulators and achieves Zero Voltage Switching (ZVS) without active clamping.

HiperPFS-5 Power Factor Correction ICs

• 750 V PowiGaN Switch

• The only PFC controller IC utilizing GaN technology achieves a 0.98 power factor and eliminates the need for bulky heatsinks at the PFC stage. It supports up to 250 W output and can be stacked in parallel for up to 500 W.

Highest Level of Integration in USB PD and Fast-Charging

• InnoSwitch5-Pro - 900 V PowiGaN, ZVS without active clamping, supporting 28 V USB PD EPR
• InnoSwitch4-Pro - 750 V PowiGaN, ZVS with ClampZero, digitally controllable via I²C interface
• InnoSwitch4-CZ - 750 V PowiGaN, ZVS with ClampZero for maximum efficiency
• InnoSwitch3-PD - 750 V PowiGaN, built-in USB-C and USB PD controller
• InnoSwitch3-Pro - 750 V PowiGaN, digitally controllable via I²C Interface

See live demos and meet our technical experts at Booth 9-426.

Electronic components meeting quality specifications established by the Automotive Electronics Council (AEC) are suitable for automotive use without additional component-level qualification testing. Most commonly referenced AEC documents include:

• AEC-Q100 - Failure Mechanism Based Stress Test Qualification For Integrated Circuits
• AEC-Q101 - Failure Mechanism Based Stress Test Qualification For Discrete Semiconductors

Automotive Safety Integrity Level (ASIL) is a risk classification scheme defined by the ISO 26262 - Functional Safety for Road Vehicles standard. This is an adaptation of the Safety Integrity Level (SIL) used in IEC 61508 for the automotive industry. ASIL certified devices enable implementation of ASIL traction inverter designs, dramatically reducing development time and cost.

Power Integrations offers a wide range of automotive qualified devices:

InnoSwitch3-AQ Flyback Switcher ICs
The InnoSwitch3-AQ Family of switcher ICs dramatically simplifies the design and manufacture of flyback power converters, particularly those requiring high efficiency and compact size. It's available with 1700 V SiC, 900 V PowiGaN, 750 V silicon or 900 V silicon options.

LinkSwitch-TN2Q High Voltage Offline Switcher ICs
LinkSwitch-TN2 family of ICs provides significant reduction in component count compared to traditional discrete solutions. Designs using the integrated devices are highly reliable without the use of opto isolators.

Qspeed Diodes
Qspeed diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. These features help designers improve the performance of their power conversion circuits.

SCALE-iDriver Gate Driver ICs
The SCALE-iDriver Family of gate driver ICs, optimized for driving IGBTs, traditional MOSFETs and SiC MOSFETs bring PI’s FluxLink magneto-inductive bi-directional communications technology to 1200 V driver applications.

SCALE EV Gate-Driver Boards
The SCALE EV family gate-driver boards are automotive-qualified dual-channel plug-and-play drivers for both silicon carbide (SiC) MOSFETs and silicon IGBTs.

See live demos and meet our technical experts at Booth 9-325.

The new SCALE-iFlex XLT family of dual-channel plug-and-play gate drivers is designed specifically for LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji) and equivalent “new dual” style IGBT modules. Supporting up to 2300 V blocking voltage, these single-board drivers enhance system utilization and reliability for energy storage systems and renewable energy installations.

Each compact SCALE-iFlex XLT driver board fits neatly within the outline of the module, providing converter system designers with greater mechanical design freedom. Built with PI’s advanced SCALE-2 chipset, the new devices minimize component count, further boosting reliability. They also offer robust protection for power switches, ensuring system safety and durability.

The full-featured drivers incorporate Negative Temperature Coefficient (NTC) data reporting, enabling isolated and accurate temperature measurement of the power module. This allows for optimal thermal management and potentially increases converter power by up to 30% with the same hardware. Additionally, the isolated NTC readout simplifies hardware by eliminating the need for multiple cables, connectors and extra isolation barrier crossing circuits.

See live demos and meet our technical experts at Booth 9-426. In addition, you can also see our highly integrated gate driver products in action by visiting our partners at PCIM Europe:

HY-LINE: Hall 7, Stand 108

• SCALE-iFlex XLT
• SCALE-iFlex LT NTC dual gate drivers with Negative Temperature Coefficient (NTC) sensing
• 2SP0230 SCALE-2 plug-and-play gate drivers for 62mm SiC-MOSFET and Si-IGBT modules

Mitsubishi Electric: Hall 7, Stand 409

• SCALE-iFlex LT NTC, 2SP0230
• SCALE-iFlex Single gate drivers for electric railway applications up to 3000 V
• 2SP0115T SCALE-2 dual-channel gate drivers for 17 mm IGBT modules up to 1700 V

Hitachi Energy: Hall 9, Stand 302

• 1SP0351 SCALE-2 compact single-channel gate drivers for 4500 V Press Pack IGBT (PPI) modules

Hitachi Europe: Hall 9, Stand 342

SCALE-iFlex Single