SwissSEM is a technology leader for IGBT and SiC MOSFETs. We offer our best in class products also as bare dies:

1200 V i20 fine pattern trench IGBT and d20 FRD

• ICn/IFn = 100, 150, 200 and 250 A
• VCEsat = 1.7 V at ICnom, 25 °C
• form of delivery: sawn wafer die on tape, 300 mm diameter

1700 V i20 fine pattern trench IGBT and d20 FRD

• ICn/IFn = 75, 100, 150 and 200 A
• VCEsat = 1.65 V at ICnom, 25 °C
• form of delivery: sawn wafer die on tape, 200 mm diameter

1200 V i23 micro pattern trench IGBT and d23 FRD

• ICn/IFn = 300 A
• VCEsat = 1.5 V at ICnom, 25 °C
• form of delivery: sawn wafer die on tape, 300 mm diameter

1700 V i23 micro pattern trench IGBT and d23 FRD

• ICn/IFn = 300 A
• VCEsat = 1.7 V at ICnom, 25 °C
• form of delivery: sawn wafer die on tape, 200 mm diameter

1200 V m23 SiC MOSFET

• RDSon = 13 mOhm (RT), 21 mOhm (175 °C)
• VGSth = 2.8 V (RT)
• form of delivery: sawn wafer die on tape, 150 mm diameter

The ST-Type IGBT is an industry standard 62 mm phase-leg module

The ST-Type is offered with different state of the art chip technologies:

• i20: fine pattern trench cell / i21: fine pattern optimized for high stray inductance
• i23(new): micro pattern trench cell for highest efficiency

Typical applications are:

• Renewables: Wind, PV, Battery storage
• Grid: SVC / SVG
• Industrial drives

Available ratings:

• 1200 V i20: 250, 450 A
• 1200 V i23: 300, 600 A
• 1700 V i20: 200, 450 A

FP-Type 1050 V, 600 A 3-level phase-leg

The FP-Type is a flexible module design. The 1050 V, 600 A rating is a 3-level NPC phase-leg ideally suited for PV String-type inverters and battery storage converters. The module is designed for lowest stray inductance for the inner and outer commutation loop enabling the use of fast low switching loss IGBTs. It features the latest i23 micro pattern trench IGBT chip-set for lowest overall losses and highest conversion efficiency.

EP-Type 1700 V PIM

The EP-Type (PIM) is a Power Integrated Module featuring a three phase input rectifier in B6 topology and H-bridge IGBT output stage. It is an ideal fit for cascaded multilevel MVD (medium voltage drives). Thanks to it's high integration it replaces two 34 / 62 mm modules and a rectifier module making the inverter design and assembly more efficient.

Available ratings are:

• 1700 V i23, 200, 150, 100 and 75 A

The ED-Type IGBT is an industry standard phase-leg module.
The Module is designed for highest reliability and successfully passed most stringent HV-H3TRB and H2S tests.

The ED-Type is offered with different state of the art chip technologies:

• i20: fine pattern trench cell / i21: fine pattern optimized for high stray inductance
• i23(new): micro pattern trench cell for highest efficiency

Typical applications are:

• Renewables: Wind, PV, Battery storage
• Grid: SVC / SVG
• Industrial drives
• Electric vehicles (CAV)

Available ratings:

• 1200 V i20: 450, 600 and 750 A
• 1200 V i21: 600 A
• 1200 V i23: 900 A
• 1700 V i20: 450, 600 A
• 1700 V i23: 900 A

HEEV-Type

The HEEV is the most compact 1200 V SiC MOSFET Module for electric vehicle applications in the 200 to 250 kW class on the market with just 58 x 45 mm footprint area. It features a very low inductive design and lowest connection resistance making maximal use of the SiC MOSFETs.
A unique design feature is the base-less design that allows direct water cooling of the substrate. This eliminates large area sinter or solder joints, offering highest power cycling capability.

EVD-Type

The EVD is a 3-phase module for electric vehicle applications in the 200 to 250 kW class. It features an unique internal module layout offering lowest connection resistance and homogenous current sharing making best use of the SiC Chips. The EVD will also soon be available as an IGBT version featuring our highly efficient i23 chip-set

The EVD and HEEV can be equipped with SiC MOSFETs from various vendors including the newly developped SwissSEM SiC MOSFET with record efficiency.

HEEV Ratings:

• 1200 V SiC: RDson: 4, 3 and 2 mOhms

EVD Ratings:

• 1200 V SiC: RDson: 3 and 2 mOhms
• 1200 V i23: 600 A