48V Hot Swap MOSFET

AOS is introducing its AEC-Q101 qualified Generation 3 1200V SiC MOSFET technology that will provide a 20-30 percent loss improvement compared to the already leading Gen 2 technology. This performance enhancement will not come with a penalty to robustness as the Gen3 technology has improved ruggedness, including full HV-H3TRB compliance for harsh environment applications. These new MOSFETs expand the existing automotive-qualified 650V, 750V, 1200V, and 1700V SiC MOSFETs in through-hole and surface mount/topside cooled packages. The 1200V Gen3 SiC MOSFETs will initially be available from 15mohm to 40mohm in TO247-4L packages with production starting May 2025.