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B-TRAN®
Description
B-TRAN® is Bidirectional Bipolar Junction Transistor (B-TRAN®) is a normally-on, double-sided cooled device designed for high-efficiency static switching applications.
Featuring ultra-low on-state voltage drop and best-in-class bidirectional operation, the B-TRAN® reduces conduction losses and enables simplified circuit designs by minimizing the need for additional components. Its robust construction, positive temperature coefficient for easy paralleling, and isolated TO-264 package provide superior thermal performance and reliability.
Ideal for Static and Low-Frequency Applications
- Solid State Circuit Breakers (SSCB)
- Static Transfer Switches (STS)
- Renewable Energy Generation & Storage (BEES)
- Battery Disconnect Units (BDU) & EV Contactors
- AI/Cloud High-density UPS & data center architectures
Key Advantages of B-TRAN®:
- Designed for always-on current paths: Optimized for continuous conduction where losses and thermal behavior dominate.
- Native bidirectional conduction: Eliminates back-to-back or diode-paired devices, reducing component count and complexity.
- Lower steady-state conduction losses: Very low on-state voltage minimizes heat in static and low-frequency applications.
- Predictable thermal behavior; Architecture supports stable, controllable temperature rise under continuous load.
- Parallel-friendly scaling: Enables higher current designs without thermal runaway or complex balancing.
- Double-sided cooling capability: Improves heat extraction and supports compact, high-power-density designs.
- Deterministic turn-off under fault conditions: Enables fully controllable, bidirectional turn-off for static breaking applications.
- Well-suited for modern voltage architectures:1200 V blocking margin supports ~ 800 V DC systems
