1200V 30mΩ six-PAK Power Module Package (JG1R30M12SP)

▶Reduced Ringing / Fast and More Efficient Switching
▶Low Conduction Losses at all Temperature / Compatible with Gate Drivers
▶Better Power Density and System Efficiency / Lower capacitance
▶Higher system efficiency / Lower thermal impedance / Lower Qg

Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied,
it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually
increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package,
it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for
High Voltage Solution as shown in the above figure.

▶Reduced Ringing / Fast and More Efficient Switching
▶Low Conduction Losses at all Temperature / Compatible with Gate Drivers
▶Better Power Density and System Efficiency / Lower capacitance
▶Higher system efficiency / Lower thermal impedance / Lower Qg

Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied,
it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually
increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package,
it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for
High Voltage Solution as shown in the above figure.

▶Reduced Ringing / Fast and More Efficient Switching
▶Low Conduction Losses at all Temperature / Compatible with Gate Drivers
▶Better Power Density and System Efficiency / Lower capacitance
▶Higher system efficiency / Lower thermal impedance / Lower Qg

Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied,
it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually
increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package,
it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for
High Voltage Solution as shown in the above figure.

▶ VDS = 1200V, ID = 500A (Tj=100°C), Rds(on) = 5mΩ
▶ Employs 3D Clip Technology for high reliability : AQG324
▶ SFDSC-4PL structure by adopting 1200V, 14mΩ Wolfspeed Chip: AEC Q101 Qualification
▶ SFDSC-4PL : Safety Dual Side Cooling Power Module Three Power Lead

The innovative and small package is designed for Dual Sided Cooling with great thermal performance.
The low stray inductance and increased blocking voltage support the design of systems with a very high efficiency.
Using 1200V 14mΩ SiC MOSFET. The SiC MOSFET employs a Wolfspeed device.

▶Reduced Ringing / Fast and More Efficient Switching
▶Low Conduction Losses at all Temperature / Compatible with Gate Drivers
▶Better Power Density and System Efficiency / Lower capacitance
▶Higher system efficiency / Lower thermal impedance / Lower Qg

Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied,
it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually
increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package,
it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for
High Voltage Solution as shown in the above figure.

▶Reduced Ringing / Fast and More Efficient Switching
▶Low Conduction Losses at all Temperature / Compatible with Gate Drivers
▶Better Power Density and System Efficiency / Lower capacitance
▶Higher system efficiency / Lower thermal impedance / Lower Qg

Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied,
it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually
increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package,
it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for
High Voltage Solution as shown in the above figure.

▶Reduced Ringing / Fast and More Efficient Switching
▶Low Conduction Losses at all Temperature / Compatible with Gate Drivers
▶Better Power Density and System Efficiency / Lower capacitance
▶Higher system efficiency / Lower thermal impedance / Lower Qg

Because both Kelvin source concept suitable for high-speed switching systems and SiC technology are applied,
it is the best solution to improve the malfunction of the system caused by parasitic effects resulted from the gradually
increased switching speed. Since dynamic losses can be reduced by more than 20% compared to standard TO-247 package,
it has the advantage of increased system efficiency. it is also designed with high voltage Creepage distance suitable for
High Voltage Solution as shown in the above figure.