HEEV-Type

The HEEV is the most compact 1200 V SiC MOSFET Module for electric vehicle applications in the 200 to 250 kW class on the market with just 58 x 45 mm footprint area. It features a very low inductive design and lowest connection resistance making maximal use of the SiC MOSFETs.
A unique design feature is the base-less design that allows direct water cooling of the substrate. This eliminates large area sinter or solder joints, offering highest power cycling capability.

EVD-Type

The EVD is a 3-phase module for electric vehicle applications in the 200 to 250 kW class. It features an unique internal module layout offering lowest connection resistance and homogenous current sharing making best use of the SiC Chips. The EVD will also soon be available as an IGBT version featuring our highly efficient i23 chip-set

The EVD and HEEV can be equipped with SiC MOSFETs from various vendors including the newly developped SwissSEM SiC MOSFET with record efficiency.

HEEV Ratings:

• 1200 V SiC: RDson: 4, 3 and 2 mOhms

EVD Ratings:

• 1200 V SiC: RDson: 3 and 2 mOhms
• 1200 V i23: 600 A