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High-Performance Silicon Nitride Substrate
Description
With silicon nitride, we offer a reliable solution for a wide range of applications in high-performance electronics, such as electric vehicles, vehicle electrification, industry and renewable energy.
Key advantages:
- High flexural strength ≥ 700 MPa
- High fracture toughness ≥ 6.5 MPa*√m
- Dielectric strength AC/DC: ≥ 25 kV/mm
These properties ensure extreme robustness for applications with the highest power density in power electronics, especially with thin Sinalit substrates (≥ 0.25 mm).
In addition, the material has a high thermal conductivity of 90 W/mK. In combination with AMB (Active Metal Brazing) or SMB (Sputter Metal Bonding) metallization options, Sinalit is the optimal choice for WBG (Wide Band Gap) dice, such as those used in semiconductor-based power modules.
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