Dominik describes the effort involved in a market launch of GaN power modules as well as the opportunities offered by new chip and packaging technologies. The experts agree that GaN semiconductors deliver better performance in various applications and power classes. Finally, they address the characterization of GaN using calorimetric measurements and double pulse test, with both agreeing that this combination improves accuracy of virtual prototyping and digital twins.
About Dominik Koch
Dominik Koch (student member of the IEEE) received a BSc and MSc in Electrical Engineering in 2016 and 2018 respectively from the University of Stuttgart, Stuttgart, Germany, where he is currently working toward the Dr.-Ing. Degree in Electrical Engineering with a focus on low voltage high current GaN converter applications. Since March 2019, he has been a research associate with the Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart and, since 2023, group leader for the power electronics research group. He has authored/coauthored more than 30 peer-reviewed publications. His current research interests include wide band gap power semiconductor characterization, packaging and simulation.
