Comprehensive Comparison of Si IGBTs and SiC MOSFETs in Automotive Exciter Module Applications

11 Jun 2026

Speaker: Saad Khalid, Characterization Engineer, Robert Bosch

This paper presents the evaluation of a Field Excited Power Module (FSM) designed for a 1200 V Electrically Excited Synchronous Motor (EESM) in automotive applications. Three semiconductor device options — including Si IGBTs and SiC MOSFET variants — are implemented in an identical FSM design. Dynamic characterization under identical test conditions determines the optimal device technology for FSM performance.

More about the person

Saad Khalid

Characterization Engineer, Robert Bosch

Saad Khalid is a Characterization Engineer at Bosch, Reutlingen, Germany. He holds an M.Sc. in Power Engineering from TUM, where he received a bronze medal. His work focuses on the characterization and design of power modules. His research interests include design optimization, performance enhancement, and evaluation of these modules, with emphasis on efficiency, thermal behavior, and advanced design methods. He is the co-author of several scientific papers.

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Comprehensive Comparison of Si IGBTs and SiC MOSFETs in Automotive Exciter Module Applications

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Saad Khalid

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