Advancing Embedded Power: Copper Sinter Innovations for Next-Gen E-Mobility

Embedded power electronics offer major gains for SiC‑based e‑mobility systems, but reliable, scalable die‑attach manufacturing—across cavity, planar copper, or hybrid embedded structures—remains a challenge. The Heraeus copper‑sinter innovation, now in the final stages of development, provides a new path to create robust all‑copper interconnect systems that boost power density, improve thermal performance, and enhance long‑term reliability. It enables compact embedded designs while reducing material interfaces and parasitic inductance for faster, cleaner SiC switching. Recent formulations exceed 40 MPa shear strength with sinter temperature below 260 °C, supporting cost‑effective, low‑temperature integration once commercialized.

This presentation shows how optimized dispensing and precise die placement improve wetting, cut voiding, and ensure uniform bond lines for high‑yield processing. Attendees gain early access to near‑market innovations shaping future embedded power‑module design.