Speaker: Jens Baringhaus, Chief Expert, Robert Bosch
Trench technology is essential to continue performance improvements in Silicon Carbide MOSFETs. Next generation devices will greatly profit from the use of advanced trench architectures yielding low specific on-resistance, lower switching losses as well as much improved trade-offs between performance and robustness. The generation 3 technology from Bosch features an advanced shielding structure to ultimately shield the trench against off-state electric fields and enables a strong reduction of specific on-resistance and increase of short-circuit withstand capability.
An outlook to generation 4 and generation 5 design philosophy will be provided, to demonstrate the high potential of SiC trench MOSFETs for future applications demanding strong performance improvements. The mastering of trench technology is the base for all these advanced concepts and will be essential to continue the performance roadmap of SiC power device technology.
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