Speakers:
Masayoshi Tarutani, Chief Expert, Mitsubishi Electric
Khalid Hussein, Senior Manager Technical Marketing - Automotive Power Semiconductor, Mitsubishi Electric Europe
With the opening of the new 8-inch SiC wafer process fab, Mitsubishi Electric will continue to provide innovative SiC-MOSFET power device solutions that enable reliable, high-efficiency e-mobility applications.
In this short presentation, we will show our in-house designed and developed efficient SiC-MOSFET bare dies (planar and trench) and compact, highly reliable transfer molded package products suitable for traction inverters and solid-state contactor relays. In particular, we present a device structure optimized for SiC-MOSFET performance parameters (low Rdson, short-circuit capability, switching loss, and gate switching stability).
We will also mention promising recent results on the improvement of the body-diode electrical properties of SiC-MOSFETs by proton implantation and the effect of inhibiting bipolar degradation.
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