Speaker: Sebastian Fahlbusch, Head of Product Application Engineering SiC, Nexperia
This presentation provides a detailed evaluation of how Nexperia’s Silicon Carbide technology combined with the strength of high-end Top-Side Cooled power packages like QDPAK and X.PAK. This strong couple of advanced package and Wide-Bandgap power semiconductor technology help system engineers to increase the performance and power density of EV power auxiliaries like On-Board Chargers (OBC) and HVAC e-Compressors, which are connected to the high voltage DC bus of the vehicle.
The critical thermal and electrical performance differences between top-side-cooled (TSC) and bottom-side-cooled (BSC) architectures will be discussed and illustrated by comparative analysis. Furthermore, the presentation will show how careful tuning of the gate drive levels can lead to further performance improvement by utilizing Nexperia’s SiC MOSFE high gate ruggedness to offer an higher performance and lower-cost solutions for hardware and systems designers.
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